METHOD OF MANUFACTURING MOS CAPACITOR OF VERTICAL STRUCTURE ON SOI WAFER FOR MAXIMIZING AREA EFFICIENCY AND ACQUIRING VARIABLE CAPACITOR

摘要

PURPOSE: A method is provided to maximize the efficiency of an area and to acquire a variable capacitor by forming a vertical MOS(Metal Oxide Semiconductor) capacitor on an SOI(Silicon On Inductor) wafer. CONSTITUTION: An oxide layer(104) and a silicon layer(115) are sequentially formed on a silicon substrate(102). A plurality of trenches are formed in the silicon layer by using etching. A gate oxide layer(116) is formed on the etched silicon layer. A gate poly(119) is formed on the gate oxide layer.