首页> 外国专利> VERTICAL CAPACITOR STRUCTURE, CAPACITOR COMPONENT, AND METHOD FOR MANUFACTURING THE VERTICAL CAPACITOR STRUCTURE

VERTICAL CAPACITOR STRUCTURE, CAPACITOR COMPONENT, AND METHOD FOR MANUFACTURING THE VERTICAL CAPACITOR STRUCTURE

机译:垂直电容器结构,电容器组件以及制造垂直电容器结构的方法

摘要

A vertical capacitor structure includes a substrate, at least a pillar, a first conductive layer, a first dielectric layer and a second conductive layer. The substrate defines a cavity. The pillar is disposed in the cavity. The first conductive layer covers and is conformal to the cavity of the substrate and the pillar, and is insulated from the substrate. The first dielectric layer covers and is conformal to the first conductive layer. The second conductive layer covers and is conformal to the first dielectric layer. The first conductive layer, the first dielectric layer and the second conductive layer jointly form a capacitor component.
机译:垂直电容器结构包括基板,至少一个柱,第一导电层,第一介电层和第二导电层。基板限定腔。支柱布置在腔中。第一导电层覆盖并与基板和柱体的腔共形,并且与基板绝缘。第一介电层覆盖并与第一导电层共形。第二导电层覆盖并与第一电介质层共形。第一导电层,第一介电层和第二导电层共同形成电容器组件。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号