FLASH MEMORY CELL WITH CONVEX TYPE FLOATING GATE AND CONCAVE TYPE CONTROL GATE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A flash memory cell and a manufacturing method thereof are provided to improve coupling ratio between a floating gate and a control gate without the increase of cell size and to increase capacitance by using a convex type structure as the floating gate and a concave type structure as the control gate. CONSTITUTION: A tunnel oxide layer(102) is formed on a semiconductor substrate(100). A convex type floating gate(104'') is formed on the tunnel oxide layer. An inter-gate dielectric(118') is formed thereon. A concave type control gate(120') capable of enclosing the floating gate is formed on the inter-gate dielectric. A source/drain region(116) are formed in the substrate to align the floating gate.