LASER DIODE HAVING VERTICAL ELECTRODE STRUCTURE USING SAPPHIRE ETCHING METHOD AND FABRICATING METHOD THEREOF FOR REDUCING AREA OF CHIP BY FORMING TWO ELECTRODES ON TOP SIDE AND BOTTOM SIDE OF CHIP

摘要

PURPOSE: A laser diode having a vertical electrode structure using a sapphire etching method and a fabricating method thereof are provided to improve chip production per a wafer by reducing an area of a chip based on two electrodes formed in both sides of the chip. CONSTITUTION: A base substrate(17) includes a stripe via hole. A first conductive type contact layer(15) is formed on the base substrate. A first conductive type clad layer(14) is formed on the first conductive type contact layer. A light emitting layer(13) is formed on the first conductive type clad layer. A second conductive type clad layer(12) is formed on the light emitting layer. A second conductive type contact layer(11) is formed on the second conductive type clad layer. A first electrode(21) is formed on the second conductive type contact layer. A second electrode(19) is connected to the first conductive type contact layer through the stripe via hole.