LIGHT EMITTING DIODE HAVING VERTICAL ELECTRODE STRUCTURE, METHOD FOR MANUFACTURING THE SAME AND ETCHING METHOD FOR SAPPHIRE SUBSTRATE TO INCREASE CHIP PRODUCTION PER WAFER

摘要

PURPOSE: A light emitting diode having a vertical electrode structure, a manufacturing method for the same are provided for simplifying a manufacturing process. CONSTITUTION: A basic substrate(17) is provided with a via. A first conductive contact layer(15) is formed on the basic substrate. A first conductive clad layer(143) is formed on the first conductive contact layer. A light emitting layer(142) is formed on the first conductive clad layer. A second conductive clad layer(141) is formed on the light emitting layer. A second conductive contact layer(13) is formed on the second conductive clad layer. A first electrode(12) is formed on the second conductive contact layer. A second electrode(19) is connected with the first conductive contact layer through the via.