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Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

机译：用于倒装芯片GaN发光二极管应用的纳米图案蓝宝石的电感耦合等离子体蚀刻

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Byung-Jae Kim; Michael A. Mastro; Hyunjung Jung; Hong-Yeol Kim; Sung Hyun Kim; Ron T. Holm; Jennifer Hite; Charles R. Eddy; Joona Bang; Jihyun Kim;
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1. Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications [J] . Byung-Jae Kim, Michael A. Mastro, Hyunjung Jung, Thin Solid Films . 2008,第21期

机译：纳米图案蓝宝石的电感耦合等离子体刻蚀，用于倒装芯片GaN发光二极管应用
2. The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching [J] . Lin J., Huang S., Su Y., Plasma Science, IEEE Transactions on . 2014,第12期

机译：电感耦合等离子体刻蚀制备的纳米图案蓝宝石衬底上生长的GaN基发光二极管
3. Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching [J] . Hung-Wen Huang, Chih-Chiang Kao, Tao-Hung Hsueh, Materials Science and Engineering. B, Solid-State Materials for Advanced Technology . 2004,第2期

机译：使用自组装镍纳米掩模和电感耦合等离子体反应离子刻蚀制备GaN基纳米棒发光二极管
4. Abbreviated GaN Metalorganic Vapor Phase Epitaxy Growth Mode on Nano-Patterned Sapphire for Enhanced Efficiency of InGaN-Based Light-Emitting Diodes [C] . Yik-Khoon Ee, rnXiao-Hang Li, rnJeff Biser, Light-emitting diodes: Materials, devices, and applications for solid state lighting XIV . 2010

机译：氮化镓蓝宝石上的氮化镓金属有机气相外延生长模式可提高基于InGaN的发光二极管的效率
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

机译：在感应耦合等离子体反应器中研究碳氟化合物沉积和蚀刻对硅和二氧化硅蚀刻工艺的影响（使用三氟化甲基），并开发了用于研究等离子体与表面相互作用机理的反应离子束系统。
6. Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching [O] . Lung-Chien Chen, Wen-Fang Tsai 2013

机译：通过无掩模化学刻蚀制备的涂有银纳米颗粒的蓝宝石图案衬底上的GaN基发光二极管的性能
7. Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching [O] . Lung-Chien Chen, Wen-Fang Tsai 2013

机译：通过无掩模化学刻蚀制备的涂有银纳米颗粒的蓝宝石图案衬底上的GaN基发光二极管的性能
8. Comparison of ICl- and IBr-Based Plasma Chemistries for Inductively Coupled Plasma Etching of GaN, InN and AlN;Material Science Engineering B [R] . Abernathy, C. R. , Cho, H. , Donovan, S. M. , 1998

机译：用于GaN，InN和alN的电感耦合等离子体蚀刻的基于ICl和IBr的等离子体化学的比较;材料科学工程B

Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

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