PHOTORESIST POLYMER AND ANTI-REFLECTIVE POLYMER WHICH IS USED IN 248NM KRF MICROPATTERN-FORMING PROCESS, AND PHOTORESIST COMPOSITION AND ANTI-REFLECTIVE COMPRISING THE SAME

摘要

PURPOSE: Provided are a photoresist polymer capable of preventing the photoresist damage pattern by standing waves, and an anti-reflective polymer capable of forming good pattern, which is used in 248nm KrF micropattern-forming process, and a photoresist composition and an anti-reflective composition comprising the same. CONSTITUTION: The photoresist polymer has a structure represented by the formula 2 and has a weight average molecular weight of 5,000 to 10,000. The anti-reflective polymer has a structure represented by the formula 3 or the formula 4, and has a weight average molecular weight of 1,000-10,000,000. The photoresist composition comprises the photoresist polymer, a photoacid generator and an organic solvent. The anti-reflective composition comprises the anti-reflective polymer, a thermal acid generator and an organic solvent.