PHOTORESIST AND ORGANIC ANTI-REFLECTIVE POLYMER WHICH CAN BE USED IN THE 248NM KRF MICRO PATTERN-FORMING PROCESS AND PHOTIRESIST AND ANTI-REFLECTIVE COMPOSITION COMPRISING THEREOF

摘要

The present invention is 248 nm KrF relates to a photoresist and anti-reflective coating composition comprising a photoresist and anti-reflective coating polymer and the polymer having a high absorbance for the light source, in particular, a conventional photoresist and anti-reflective coating polymer, the light source while having a high absorbance for, by the introduction of specific monomers having a relatively high etch rates, without introducing an anti-reflection film, it is possible to prevent damage and collapse phenomenon of a photoresist pattern caused by the standing wave, reflection of film is introduced also in this case, the etching rate of the anti-reflection film highly, and thus because of this not require excessive etching, the photoresist pattern, and it becomes possible to prevent damage to the lower layer, the photoresist that end, to form a good photoresist pattern and a reflection preventing film including the polymer and this Photoresist and reflection relate to film composition.