METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE TO PREVENT BRIDGE PHENOMENON FROM UPPER ELECTRODE TO LOWER ELECTRODE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to prevent a bridge phenomenon occurring from an upper electrode to a lower electrode by depositing a sacrificial oxide layer on a lower metal layer for the lower electrode and by eliminating the metal polymer generated in etching a metal layer and a dielectric layer when the sacrificial oxide layer is etched. CONSTITUTION: A semiconductor substrate(21) having a predetermined underlying layer(22) is prepared. The first metal layer for a lower metal is formed on the substrate. A sacrificial oxide layer is deposited on the first metal layer. The sacrificial oxide layer is patterned to expose a part of the first metal layer. An insulation layer and the second metal layer are sequentially formed on the sacrificial oxide layer and the exposed first metal layer. The second metal layer and the insulation layer are etched to form an upper electrode(27a) and a dielectric layer(26a). The sacrificial oxide layer is removed while the polymer generated in forming the upper electrode is eliminated. The first metal layer is etched to form a lower electrode(23a).