METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO CONTROL GENERATION OF METALLIC POLYMER CAUSED BY LOSS OF UPPER ELECTRODE IN ETCH PROCESS OF INSULATION LAYER AND PREVENT BRIDGE BETWEEN UPPER AND LOWER ELECTRODES OF CAPACITOR OF MIM STRUCTURE

摘要

A kind of purpose: method, it is arranged to prevent a bridge for manufacturing semiconductor device, it is between the upper/lower electrode of a capacitor of MIM (metal insulator metal) structure, by being interconnected to form insulating layer in lower metal, by forming identical tungsten bolt in the parts MIM as connecting part and upper electrode by using tungsten bolt as MIM capacitor in a lower part metal phase. Construction: it includes the parts MIM that semi-conductive substrate (10), which is produced it, and the capacitor and a lower part metal phase for being used to form a MIM structure connect part, is used to form lower metal interconnection (14). A metal layer, an arc (anti-reflection coating) (16) and an insulating layer (18) are sequentially deposited on substrate. One patterning process will carry out leaving insulating layer in the parts MIM only by an etch process, use the first photoresist mode. Metal layer carries out one etch process of patterning, so that a lower electrode is formed in the parts MIM, lower metal, which is interconnected to form, is connected with each other part in lower metal. By using an etch process of third photoresist mode, a layer insulation (24), which is deposited and patterned, to be made insulating layer exposure to the parts MIM and arc exposure is made to be connected with each other part to lower metal, so that a contact hole is formed. A metal material, which is deposited to fill a vacancy contact hole and be planarized to one upper electrode of form, forms a metal plug (30) in the parts MIM and in lower metal interconnection part.