METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR OF SEMICONDUCTOR DEVICE FOR FORMING GATE INSULATING LAYER HAVING BOTTOM FACE WIDER THAN TOP FACE

摘要

PURPOSE: A method of manufacturing a field-effect-transistor of a semiconductor device is provided to improve the yield and the current performance by preventing a GOI(Gate On insulator) fail and increasing a width of a transistor. CONSTITUTION: A first insulating layer is formed on a semiconductor substrate. A first conductor is formed thereon to form a pin. A voltage control region is formed by an ion implantation process. A gate insulating layer is formed by performing a thermal process. A second conductor is formed by depositing a conductor thereon and patterning the conductor. An LDD(Lightly doped drain) region is formed by an ion implantation process. A spacer(8) is formed by depositing and etching an insulating layer. A source/drain is formed by implanting ions(9).