LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME USING P-TYPE CONDUCTIVE TRANSPARENT OXIDE THIN FILM ELECTRODE

摘要

The present invention is a nitride-based light-emitting device according to a light emitting device and a manufacturing method using a p-type transparent conductive oxide thin film electrode layer of the substrate, n-type cladding layer, active layer, p-type cladding layer, the ohmic contact layer are sequentially stacked and, the ohmic contact layer is formed of a p-type transparent conductive oxide thin film. According to the light emitting device and a manufacturing method using such a p-conductive transparent thin-film electrode layer, the ohmic contact characteristics with the p-type cladding layer is improved high current - as well as indicate the voltage characteristics, a high light transmission with a transparent electrode It makes it possible to increase the light emitting efficiency of the device.