light emitting device and method of manufacturing the same using p-type conductive transparent oxide thin film electrode

摘要

the present invention is a p-type transparent conductive oxide thin film electrode with the light emitting device and a method of manufacturing the related that the light emitting device includes a substrate , n -type cladding layer , active layer , p -type cladding layer , and an ohmic contact layer are sequentially formed , an ohmic contact layer is formed of a p-type transparent conductive oxide thin film . According to the light emitting device and a manufacturing method using such a p -type transparent conductive film electrode layer , the ohmic contact characteristics with the p-type cladding layer is improved excellent current - voltage characteristics as well as to indicate , as a transparent electrode having a high light -transmitting because it is possible to increase the luminous efficiency of the device .