A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A BURIED CHANNEL

摘要

The present invention is a buried (Buried) N- separate shallow trench at the channel formed in the mask ROM (Mask ROM): the manufacture of semiconductor devices having a buried channel capable of preventing (Shallow Trench Isolation STI) divots (Divot) generation of the region It relates to a method. A method for manufacturing a semiconductor device having a buried channel according to the present invention includes the steps of forming a device isolation film on a semiconductor substrate; The method comprising in the region where the source / drain regions of the semiconductor substrate to form sequentially deposited a first nitride film, oxide film and the second film is formed as a buried channel composed of a nitride film; Forming a buried channel (Buried Channel) by implanting ions according to the deposited film forming pattern; And a step of film forming the buried channel in order to remove the etching scheme. It is possible to prevent a divot region of shallow trench isolation (STI) according to the present invention it is possible to prevent the formation of residues in the poly film is deposited in a subsequent process.