METHOD FOR FORMING SHALLOW TRENCH ISOLATION IN SEMICONDUCTOR DEVICE PROCESSING

摘要

The trench isolation method for a semiconductor device is disclosed. Etching the field region formed in the semiconductor substrate to form a trench for device isolation. Oxidizing the sidewall of the trench to form the inner wall oxide film. By nitriding the substrate to form the inner wall oxide film and a nitride oxide film on the inner wall of the trench surface. To form a first oxide film so as to fill the inside of the trench in part. And etching a portion of the first oxide film. Then, on the first oxide film with the etched portion to form a second oxide film to completely fill the interior of the trench. By the way, can the device isolation void free and silicon consumption.