METHOD FOR DEPOSITING ZINC OXIDE LAYER ON SILICON OR SAPPIRE BY ATOMIC LAYER DEPOSITION

摘要

The present invention relates to a deposition method ZnO film on a silicon or sapphire substrate according to the ALE, in the deposition method ZnO film on a silicon or sapphire substrate by specifically ALE, by performing the ECR plasma pre-treatment before the ZnO film coating according to the ALE substrate It relates to a method of depositing ZnO film comprising cares for the cleaning.; By performing the oxygen, hydrogen or argon ECR plasma pre-treatment before the ZnO coating in the present invention, it is possible to reduce the initial occurrence ZnO film grown incubation period of which has, in particular by performing the oxygen ECR plasma pre-treatment, to increase the hydroxyl group density on the substrate surface film it is possible to further improve the growth.