INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF TO STABLY USE HTO LAYER AND BPSG LAYER WITHOUT PREVENTING SILICIDE LAYER FROM BEING INFLUENCED BY HEAT

摘要

PURPOSE: An interlayer dielectric of a semiconductor device is provided to stably use an HTO(high temperature oxide) layer and a BPSG(boron phosphorous silicate glass) layer without preventing a silicide layer from being influenced by heat by interposing a low temperature oxide layer between the silicide layer and the HTO layer. CONSTITUTION: An electrode structure of a semiconductor device includes a silicide layer(33). A low temperature oxide layer(35) is formed on the silicide layer at a predetermined temperature. A high temperature oxide layer(36) formed at a higher temperature than that of the low temperature oxide layer and a BPSG layer(37) are sequentially stacked. The thickness of the low temperature oxide layer is 300-500 angstroms, and the predetermined temperature is 350 deg.C.