Ferroelectric Capacitor Formation Method with Lower Electrode with Reduced Leakage Current

摘要

The present invention relates to a ferroelectric capacitor for improving leakage current characteristics and a method of forming the same when using a ruthenium dioxide (RuO ₂ ) film as a lower electrode of a ferroelectric capacitor, wherein the conductive film plug on the lower layer including a conductive plug A first ruthenium dioxide electrode connected to the first electrode; A first diffusion barrier layer disposed on the first ruthenium dioxide electrode to prevent oxygen diffusion into the first ruthenium dioxide electrode; A crystallized ferroelectric thin film on the diffusion barrier; And a second ruthenium dioxide electrode formed on the ferroelectric thin film.