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CHEMICAL VAPOR DEPOSITION SYSTEM AT ROOM TEMPERATURE BY ELECTRON CYCLOTRON RESONANCE PLASMA AND PULSED DC BIAS COMBINED SYSTEM AND THE PREPARATION METHOD FOR METAL COMPOSITE FILM USING THE SAME
CHEMICAL VAPOR DEPOSITION SYSTEM AT ROOM TEMPERATURE BY ELECTRON CYCLOTRON RESONANCE PLASMA AND PULSED DC BIAS COMBINED SYSTEM AND THE PREPARATION METHOD FOR METAL COMPOSITE FILM USING THE SAME
PURPOSE: A room temperature chemical deposition system combining electron cyclotron resonance(ECR) plasma and a pulse-type direct current(DC) bias is provided to form a metal composite layer at a room temperature by accelerating the ions analyzed by plasma over a substrate while using a high voltage potential difference generated from a DC bias. CONSTITUTION: The substrate(11) on which a sample(12) is mounted is installed in a reaction chamber(1). An ECR apparatus(2) supplies plasma, connected to the reaction chamber. A precursor supply apparatus(3) supplies an organic metal compound ionized by the plasma, connected to the reaction chamber. An induction apparatus induces the ionized metal ions and organic ions to the sample on the substrate.
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