Uniform irradiation method and rig for neutron transmutation doping of silicon

摘要

The present invention relates to a neutron irradiation method for a single crystal doped with the doping of the silicon single crystal with neutrons, and more particularly to a uniform irradiation of the silicon neutron doping the outer surface of the single crystal the neutron through the thickness control of water and air, until a uniform irradiation It relates to a method.; This method is rotated after the input single crystal reflector is disposed vertically to the inside of the investigation hole provided in the reflector tank of research reactors, in the longitudinal direction and radial direction in a manner such that the neutron irradiation of neutron doping is irradiated; The top and bottom in a radial direction of the single crystal, the amount of irradiation of neutrons emitted in the longitudinal direction and radial direction of the single crystal through the formation of an air layer, and then there is formed a water layer center part, enclosing the single crystal has a thickness control of the water layer and the air layer this is to ensure uniform.; By providing a uniform irradiation method as described above, it is possible to facilitate the control of the neutron dose required in the single crystal, by controlling the thickness of water to reduce the loss of neutrons has an effect of increasing the doping capacity.