Manufacturing method for Extreme UltraViolet mask

摘要

PURPOSE: A method for fabricating an EUV(Extreme UltraViolet) mask is provided to improve contrast by using an absorbing layer as a substrate and forming a reflective layer pattern on the absorbing layer. CONSTITUTION: An absorbing layer(21) used as a substrate is formed. The absorbing layer(21) is formed by an Al layer or a TaSi layer or a TiN layer or a Ti layer or a W layer or a Cr layer or an NiSi layer, or a TaSiN layer. A reflective layer pattern(23) is formed on an expected pattern part of an upper portion of the absorbing layer(21). The reflective layer pattern(23) is selected from groups formed by a laminating structure of a Mo/Si layer, Mo/Be layer, MoRu/Be layer, and a Ru/Be layer or their combination a single material. In addition, the reflective layer pattern(23) can be formed by a single material. A spacer is formed on a sidewall of the reflective layer pattern(23) if the reflective layer pattern(23) inclines.