Etching semiconductor material used in the production of a micromechanical acceleration sensor comprises etching defined structures having an etching profile in which the process parameters can be changed during etching

摘要

Etching a semiconductor material comprises etching defined structures having an etching profile (6a,7a,6b,7b), in which the process parameters can be changed during etching so that the etching profile is changed with the etching depth. An independent claim is also included for a semiconductor component produced by the above process.