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Treating material in production of semiconductor components comprises implanting partial region of material with ions and etching material using etching rate which is changed by implanted ions
Treating material in production of semiconductor components comprises implanting partial region of material with ions and etching material using etching rate which is changed by implanted ions
Treating material in the production of semiconductor components comprises implanting a partial region (1) of the material (10) with ions (2) and etching the material using an etching rate which is changed by the implanted ions.
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