Lateral semiconductor component with at least one field electrode formed in drift zone extending laterally between doped terminal regions

摘要

The semiconductor component has a drift zone (40) formed below one surface (101) of a semiconductor body (100) so that it extends laterally between 2 doped terminal regions (20,30), at least one field electrode (50) projecting into the drift zone from the surface of the semiconductor body and electrically insulated from the semiconductor body by an insulation layer (52).