Lateral semiconductor component, such as IGBT-transistors and MOSFET and JFET, has drift regions of drift zone extending in lateral direction

摘要

A lateral semiconductor has a semiconductor body (6) and in which under the upper face (7) is arranged a drift-region divided into low- up to medium-doped drift zones (11) of a first conductivity type. The drift regions of the drift zone (11) extend in a first lateral direction (12) and between the drift regions trench structures (16) are arranged in a first lateral direction, and their trench walls (17) have a dielectric layer, and the trenches have a dielectric high-k-material with a high relative dielectric constant and/or a plate-layer sequence as alternate electrically conducting plates (20) and inter-plates (21) of a dielectric material. An independent claim is included for a method for fabricating a semiconductor component.