A method for processing a semiconductor structure with a depression

摘要

A method for processing a semiconductor structure (1, 2a, 2b, 3, 4; 1, gs1, gs2, 7, 8) with a depression (2; 20) comprising the steps of:(a) providing a continuous covering layer (5; 50) on the bottom region (5a; 50a), on the wall portion (5b; 50b) and the peripheral region (5c; 50c) of the depression (2; 20);(b) processing of the cover layer (5; 50) in a plasma process, in which at the same time an etching of the depression (2; 20) and a depositing a side wall passivation in the depression (2; 20) is to be achieved, and which a depth-dependent etching rate and a depth-dependent deposition rate, which are set in such a way that the bottom region (5a; 50a) of the cover layer (5; 50) is etched more rapidly than the wall portion (5b; 50b) and the peripheral region (5c; 50c),the depth-dependent etching rate and the depth-dependent deposition rate are set in such a way that, when machining a deposition of a plasma layer (10) in the upper part of the wall portion (5b) and in the peripheral region (5c) takes place and a..