Barrier layer with a titanium nitride coating for a copper metal layer to the right, which has a dielectric having a small ε

摘要

It is an improved barriers technology for connection structure elements, in particular for compounds based on copper, are provided. A thin titanium nitride coating in a conforming manner by a chemical vapor deposition is so applied that reliably all of the inner surfaces of the connection structure elements are covered, even if they are formed in a porous material, so that an area of the surface with an improved wettability for the deposition of a subsequent barrier material is made available. Thus, the step coverage of a sputtering - deposition technique, which is typically for barrier layers based on tantalum is used, been successfully used in connection with the titanium nitride coating can be used, as a result of which the wetting properties for the subsequent deposition of the cu seed layer, in comparison to a barrier layer of tantalum base be improved by means of ald. Further, the provision of a cvd - titanium nitride coating in connection with a barrier layer formed by sputtering - deposition a distinctly higher throughput in comparison to the conventional art, with a atomic layer deposition.