Barrier layer with a titanium nitride coating for a copper metallization layer, which has a dielectric having a small ε

摘要

Semiconductor structure with:a copper metal area having, which is arranged in a dielectric layer;a first barrier layer with titanium nitride, the between the dielectric layer and the metal area is arranged, wherein the thickness of the first barrier layer is approximately 20 nm or less; anda second barrier layer, which serves as a diffusion barrier for copper and the between the first barrier layer and the metal area is arranged.