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preceded charging device in a semiconductor memory device and preceded drawer method using the same

机译:半导体存储装置中的在先充电装置以及使用该装置的在先抽屉方法

摘要

The invention relates to a preceded charging device in a semiconductor memory device and a preceded charging process, that is the same is used, published. The preceded charging device contains a memory array, in which a plurality of memory address areas is divided into at least two storage groups, and a preceded drawer - total command dec or for producing at least two preceded drawer signals corresponding to a preceded drawer - command signal and an address signal, wherein said at least two preceded drawer signals are output in each case with a time delay, which corresponds to a control signal, in order to the at least two storage groups, with a time delay precharge. For this reason, the peak current, in order to reduce the jumping of the power supply.
机译:本发明涉及一种半导体存储装置中的在先充电装置以及使用的在先充电方法。在先充电装置包括存储器阵列,其中多个存储器地址区域被划分为至少两个存储组,以及在先抽屉-总命令dec或用于产生与在先抽屉-命令相对应的至少两个在先抽屉信号。信号和地址信号,其中所述至少两个在前的抽屉信号分别以一定的时间延迟输出,该时间延迟对应于控制信号,以便具有至少两个存储组的时间延迟预充电。因此,峰值电流,以减少电源的跳跃。

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