SILICON CARBIDE POWDER COMPOSITION, METHOD FOR PRODUCING SILICON CARBIDE SINTERED COMPACT USING THE SAME, AND SILICON CARBIDE SINTERED COMPACT

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide powder composition from which silicon carbide sintered compact having a high density and such an electrical insulation property that the volume resistivity can be arbitrarily controlled in a range of 10⁶-10¹³Ω×cm can be inexpensively produced in an industrial scale by firing the composition under normal pressure without performing specific atmosphere control or using a firing apparatus under pressure such as a hot pressing device; a method for producing the silicon carbide sintered compact using the same; and the silicon carbide sintered compact.;SOLUTION: The silicon carbide powder composition contains, by weight, free carbon or a precursor capable of being carbonized when it is heated in an amount of 0.5-8 wt% expressed in terms of carbon, boron or a boron compound in an amount of 0.1-4 wt% expressed in terms of boron and a silicon nitride powder in an amount of 0.1-6 wt%, and the balance comprising a silicon carbide powder and inevitable impurities.;COPYRIGHT: (C)2006,JPO&NCIPI