BISMUTH SUBSTITUTION TYPE TERBIUM-IRON-GARNET SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a garnet single crystal for which Tb is used as a host rare earth element and where the temperature characteristics of a Faraday rotation angle is improved noticeably and to provide the garnet single crystal.;SOLUTION: The garnet single crystal is manufactured by an LPE method so that the grating constant of a bismuth substitution type terbium-iron-garnet single crystal for a band range of 1.3 μm wavelength is 12.469 Å or more and 12.472 Å or less and the grating constant of the bismuth substitution type terbium-iron-garnet single crystal for a band range of 1.5 μm wavelength is 12.464 Å or more and 12.471 Å or less. Lead oxide (PbO) and boron oxide (B₂O₃) as a flux agents and the powders of terbium oxide (Tb₄O₇), bismuth oxide (Bi₂O₃) and iron oxide (Fe₂O₃) as metal oxides to form an oxide garnet epitaxial film are mixed and melted. The garnet single crystal is grown by dipping a non-magnetic garnet crystal substrate having the compositional formula of (GdCa)₃(GaMgZr)₅O₁₂ in the liquid surface of a molten liquid.;COPYRIGHT: (C)2006,JPO&NCIPI