HYDROGEN ION IMPLANT DOSE MEASURING METHOD OF SILICON SEMICONDUCTOR SUBSTRATE, AND SUBSTRATE FOR STANDARD SAMPLE

摘要

PROBLEM TO BE SOLVED: To solve the problem that, regarding a measurement of a hydrogen ion implant dose of a silicon semiconductor substrate, the monitor method of the ion implant dose using a regular Faraday cup is established assuming that all ions to irradiate have charges, and when irradiated in a state of electrically nuetral elements having no charges due to an abnormality (e.g., a reduction of a vacuum level or an abnormal discharge) during an ion irradiation process, it is impossible to measure by the Faraday cup method, and elements over ones monitored are implanted into the semiconductor substrate.;SOLUTION: By use of an FT-IR device from IR waveforms prior to hydrogen ions implanted into the semiconductor substrate, the IR waveform of an FZ crystal semiconductor substrate is acquired by a difference spectrum method (an FZ crystal corrected IR waveform prior to implantation of the hydrogen ions). Next, from the IR waveforms after the hydrogen ions are implanted, the IR waveform of the FZ crystal semiconductor substrate is acquired by the difference spectrum method, and a difference is acquired between this IR waveform and the FZ crystal corrected IR waveform prior to implantation of the hydrogen ions, as acquired above, thereby accurately measuring the hydrogen implant dose implanted into the semiconductor substrate.;COPYRIGHT: (C)2006,JPO&NCIPI