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SINGLE WAFER PROCESSING CLEANING METHOD AND SINGLE WAFER PROCESSING CLEANING APPARATUS
SINGLE WAFER PROCESSING CLEANING METHOD AND SINGLE WAFER PROCESSING CLEANING APPARATUS
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机译:单晶片加工清洁方法和单晶片加工清洁装置
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摘要
PROBLEM TO BE SOLVED: To provide a single wafer processing cleaning method and a single wafer processing cleaning apparatus, by each of which an object to be cleaned such as a semiconductor wafer can be cleaned most effectively.;SOLUTION: The single wafer processing cleaning apparatus is provided with: supporting members 22, 28 for supporting the object to be cleaned; an ultrasonic vibration diaphragm 32 arranged oppositely to the surface to be cleaned of the object which is to be cleaned and is supported by the supporting members; a liquid supplying nozzle 36 for supplying a cleaning liquid to a space between the diaphragm and the object to be cleaned; a driving member 26 for moving the supporting members in parallel to the diaphragm surface; and an ultrasonic oscillator 34 for oscillating the diaphragm ultrasonically. The surface to be oscillated of the diaphragm is arranged closely to the surface to be cleaned of the object to be cleaned within several millimeters in the position where an average sound pressure on the surface to be cleaned reaches the highest point or its vicinity. The surface to be cleaned of the object to be cleaned is cleaned by the cleaning liquid standing between the diaphragm surface and the surface to be cleaned by oscillating the diaphragm ultrasonically while moving the object W which is to be cleaned and is supported by the supporting members.;COPYRIGHT: (C)2006,JPO&NCIPI
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