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LAMINATION STRUCTURE, ELECTRONIC ELEMENT USING THE SAME, ELECTRONIC ELEMENT ARRAY USING ELECTRONIC ELEMENT, MANUFACTURING METHOD OF LAMINATION STRUCTURE, AND MANUFACTURING METHOD OF ELECTRONIC ELEMENT
LAMINATION STRUCTURE, ELECTRONIC ELEMENT USING THE SAME, ELECTRONIC ELEMENT ARRAY USING ELECTRONIC ELEMENT, MANUFACTURING METHOD OF LAMINATION STRUCTURE, AND MANUFACTURING METHOD OF ELECTRONIC ELEMENT
PROBLEM TO BE SOLVED: To provide a lamination structure capable of simply forming a minute pattern and including a high value added function in addition to the pattern formation.;SOLUTION: The lamination structure 1 contains a material whose critical surface tension changes through the provision of energy to the material, and is provided with a wettability change layer 2 including at least two parts whose critical surface tension differs such as a high surface energy section 3 wherein the critical surface tension is relatively high, and a low surface energy section 4 wherein the critical surface tension is relatively low; a conductive layer 5 formed to the high surface energy section 3 of the wettability change layer 2; and a semiconductor layer 6 provided at least in tangent to the low surface energy section 4 of the wettability change layer 2. Then the wettability change layer 2 is made of a high polymer material containing a halide.;COPYRIGHT: (C)2006,JPO&NCIPI
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