FLARE MEASURING METHOD, EXPOSURE METHOD, AND MASK FOR FLARE MEASUREMENT

摘要

PROBLEM TO BE SOLVED: To measure flares in a projection optical system for respective given elements.;SOLUTION: Aperture patterns 43A to 43D and shading patterns 44A to 44D arranged inside the aperture patterns 43A to 43D are formed on a flare measuring pattern 39A. The image of the flare measuring pattern 39A via the projection optical system is exposed with gradually increasing light exposure sequentially in a series of shot areas on a wafer coated with a photoresist, and then the wafer is developed to provide a resist pattern. Based on the resist pattern; a light exposure resulting from the exposure of the image of the aperture patterns 43A to 43D, and a light exposure resulting from the exposure of the image portion of the shading patterns 44A to 44D, are calculated, and the amount of flares for respective spacial frequency bands are determined from the calculated light exposures.;COPYRIGHT: (C)2006,JPO&NCIPI