COMPLEMENTARY METAL OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR COMPRISING COMMON GATE, LOGIC DEVICE COMPRISING IT, AND METHOD OF MANUFACTURING TRANSISTOR

摘要

PPROBLEM TO BE SOLVED: To provide a complementary metal oxide semiconductor transistor comprising a common gate, a logic device comprising it, and a method of manufacturing the transistor. PSOLUTION: The CMOS thin film transistor includes a base substrate and a silicon layer of predetermined form formed on the base substrate. A P-channel transistor is formed on the silicon layer, and a N-channel transistor sharing a gate is formed to intersect each other. A Schottky barrier inducing material layer is formed on the surface of the source and the drain of any one selected out of the P-channel transistor and the N-channel transistor. PCOPYRIGHT: (C)2006,JPO&NCIPI