METHOD FOR CORRECTING AMPLITUDE DEFECT IN MULTILAYER FILM OF EUVL MASK

摘要

PROBLEM TO BE SOLVED: To correct an amplitude defect in a Mo/Si multilayer film or Mo₂C/Si multilayer film in an EUVL mask.;SOLUTION: An amplitude defect in the vicinity of the surface of an Mo/Si multilayer film or an Mo₂C/Si multilayer film is removed by physical sputtering or gas assist etching such that the interface of an underlying Mo/Si multilayer film or Mo₂C/Si multilayer film is not destroyed by entering a low acceleration Si ion beam of 500 V or below from a liquid alloy ion source 1 containing Si subjected to mass separated by a mass separator 3 and focused through an ion optical system 6, or by entering a low acceleration Si ion beam of 500 V-2,000 V obliquely such that implantation depth becomes shallow.;COPYRIGHT: (C)2006,JPO&NCIPI