GALLIUM NITRIDE BASED ULTRAVIOLET PHOTODETECTOR

摘要

PROBLEM TO BE SOLVED: To provide an ultraviolet photodetector which uses a gallium nitride based semiconductor.;SOLUTION: A gallium nitride based ultraviolet photodetector includes an n-type contact layer, an optical absorption layer, a light transmission layer and a p-type contact layer upward in a substrate. Each of these semiconductor layers is configured with quaternary compound semiconductor materials of aluminum nitride gallium indium. By changing the composition of the components of aluminum, gallium, and indium of these materials, these semiconductor layer has a band gap which needs these semiconductor layers at one side. A reaction to an ultraviolet light of specific wavelength by this becomes specially sensitive. Moreover, it is one side that a lattice constant which these semiconductor layers matched is provided. Thereby, a matter related to a stress excess fault can be avoided. Moreover, the ultraviolet photodetector of a lattice structure of high quality is obtained. This structure further includes a positive electrode on a p-type contact layer, a light transmission ohm contact layer, a reflective prevention layer and a negative electrode on an n-type contact layer.;COPYRIGHT: (C)2006,JPO&NCIPI