Fabrication and characterization of metal-semiconductor-metal ultraviolet(MSM UV) photodetector based on ZnO ultra thin(nano scale) films with Pd Schottky contact are reported.The ZnO thin film was grown on glass substrate by thermal oxidation of pre-deposited zinc films using vacuum deposition technique.With applied voltage in the range from -3V to 3V,the contrast ratio,responsivity,and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated.The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface.I-V characteristics were studied and the parameters,such as ideality factor,leakage current,resistance-area-product,and barrier height,were extracted from the measured data.
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