Semiconductor memory devices incorporating voltage level shifters for controlling a VPP voltage level independently and methods of operating the same

摘要

A voltage level shifter for a semiconductor memory device includes a VPP level control circuit that is configured to detect a VPP voltage and to change the VPP voltage in response to a package burn-in mode signal and a test mode signal independent of at least one direct current voltage generated in response to the package burn-in mode signal.