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Method for depositing a metal gate on a high-k dielectric film and improving high-k dielectric film and metal gate interface, and a substrate treating system
Method for depositing a metal gate on a high-k dielectric film and improving high-k dielectric film and metal gate interface, and a substrate treating system
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机译:在高k介电膜上沉积金属栅极并改善高k介电膜和金属栅界面的方法以及基板处理系统
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摘要
A method to improve a high-k dielectric film and metal gate interface in the fabrication of a MOSFET by depositing a metal gate on a high-k dielectric, the method includes annealing a substrate with a high-k dielectric film deposited thereon in a thermal annealing module and depositing a metal gate material on the annealed substrate in a metal gate deposition module, wherein the annealing step and the depositing step are carried out consecutively without a vacuum break.
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