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Pr-silicate Ultrathin Films for High-k Gate Dielectrics Prepared by Metal-Organic Chemical Vapor Deposition

机译：用于高k栅极电介质的pr-硅酸盐超薄膜用金属有机化学气相沉积法制备

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Tsuchiya Yoshishige; Fujita H.; Mizuta Hiroshi; Nohira H.; Hattori T.; Oda S.;
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年度 2004
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1. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HFO2 high-K dielectric thin films [J] . Teren AR, Thomas R, He JQ, Thin Solid Films . 2005,第1a2期

机译：HFO2高K介电薄膜的脉冲金属有机化学气相沉积前驱物的比较
2. Praseodymium silicate as a high-k dielectric candidate: An insight into the Pr2O3-film/Si-substrate interface fabricated through a metal-organic chemical vapor deposition process [J] . Lo Nigro R, Toro RG, Malandrino G, Advanced Functional Materials . 2005,第5期

机译：硅酸作为高k电介质的候选材料：通过金属有机化学气相沉积工艺制备的Pr2O3膜/ Si-衬底界面的见解
3. Interfacial And Electrical Properties Of Zr_xti(1-x)o_4 0=0.66) Films Deposited By Liquid-delivery Metal Organic Chemical Vapor Deposition To Be Used As High-k Gate Dielectric [J] . B.S. Sahu, S.V.N. Pammi, Nak-Jin Seong, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2008,第4期

机译：液体输送金属有机化学气相沉积法沉积的Zr_xti（1-x）o_4 0 = 0.66）膜的界面和电学性质用作高k栅介质
4. Remote plasma enhanced-metal organic chemical vapor deposition of zirconium oxide/silicon oxide alloy, (ZrO_2)_x-(SiO_2)_(1-x)(x<=0.5), thin films for advanced high-k gate dielectrics [C] . D. Wolfe, K. Flock, R. Therrien, Symposium on Ultrathin SiO_2 and High-K Materials for ULSI Gate Dielectrics held April 5-8, 1999, San Francisco, California, U.S.A. . 1999

机译：氧化锆/氧化硅合金的远程等离子体增强金属有机化学气相沉积，（ZrO_2）_x-（SiO_2）_（1-x）（x <= 0.5），用于高级高k栅极电介质的薄膜
5. Deposition of epitaxial silicon/silicon-germanium/germanium and novel high-k gate dielectrics using remote plasma chemical vapor deposition. [D] . Chen, Xiao. 2003

机译：使用远程等离子体化学气相沉积沉积外延硅/硅锗/锗和新型高k栅极电介质。
6. Metal-Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties [O] . Dr. Maria R Catalano, Giuseppe Cucinotta, Emanuela Schilirò, 2015

机译：金属有机化学气相沉积（MOCVD）异质外延Pr0.7Ca0.3MnO3薄膜的合成：工艺条件对结构/形态和功能特性的影响
7. Dysprosium scandate thin films as an alternate amorphous gate oxide prepared by metal-organic chemical vapor deposition [O] . Thomas R., Ehrhart P., Luysberg M., 2006

机译：metal酸date薄膜作为通过金属有机化学气相沉积制备的替代非晶栅极氧化物
8. High Index of Refraction Films for Dielectric Mirrors Prepared by Metal-Organic Chemical Vapor Deposition. [R] . Brusasco, R. M. 1989

机译：金属有机化学气相沉积制备介质反射镜的高折射率。

Pr-silicate Ultrathin Films for High-k Gate Dielectrics Prepared by Metal-Organic Chemical Vapor Deposition

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