首页>
外国专利>
SEMICONDUCTOR DEVICE WITH LOW-RESISTANCE INLAID COPPER/BARRIER INTERCONNECTS AND METHOD FOR MANUFACTURING THE SAME
SEMICONDUCTOR DEVICE WITH LOW-RESISTANCE INLAID COPPER/BARRIER INTERCONNECTS AND METHOD FOR MANUFACTURING THE SAME
展开▼
机译:具有低电阻倾斜铜/栅栏互连的半导体器件及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
An inlaid copper/barrier interconnect includes a semiconductor substrate; a carbon-doped oxide (CDO) dielectric layer disposed over the semiconductor substrate; a damascene recess etched into the CDO dielectric layer; an alpha-phase tantalum (α-Ta) single-layer barrier sputter deposited on sidewall and bottom of the damascene recess; and a conductive layer deposited directly on the alpha-phase tantalum single-layer barrier, wherein the conductive layer fills the damascene recess. According to one preferred embodiment, the alpha-phase tantalum single-layer barrier has a resistivity of about 25 μΩ-cm.
展开▼