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Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers
Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers
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机译:亚纳米覆盖,临界尺寸和光刻工具投影光学计量系统,基于对晶圆上光致抗蚀剂的曝光诱发变化的测量
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摘要
A method of processing a substrate on which a layer of photoresist has been applied, the method involving: exposing the layer of photoresist to radiation that carries spatial information to generate exposure-induced changes in the layer of photoresist that form a pattern having one or more features; and before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining at least one of (1) locations of the one or more features of the pattern and (2) magnitudes of the exposure-induced changes.
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