SUB-NANOMETER OVERLAY, CRITICAL DIMENSION, AND LITHOGRAPHY TOOL PROJECTION OPTIC METROLOGY SYSTEMS BASED ON MEASUREMENT OF EXPOSURE INDUCED CHANGES IN PHOTORESIST ON WAFERS

摘要

A method of processing a substrate on which a layer of photoresist has been applied, the method involving: exposing the layer of photoresist to patterned radiation to generate exposure-induced changes in the layer of photoresist which form patterns having one or more features; and before developing the exposed photoresist, interferometrically obtaining measurements of the pattern in the exposed layer of photoresist for determining locations of the one or more features of the pattern.