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Dual-metal CMOS transistors with tunable gate electrode work function and method of making the same
Dual-metal CMOS transistors with tunable gate electrode work function and method of making the same
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机译:具有可调栅电极功函数的双金属CMOS晶体管及其制造方法
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摘要
A dual-metal CMOS arrangement and method of making the same provides a substrate and a plurality of NMOS devices and PMOS devices formed on the substrate. Each of the plurality of NMOS devices and PMOS devices have gate electrodes. Each NMOS gate electrode includes a first silicide region on the substrate and a first metal region on the first silicide region. The first silicide region of the NMOS gate electrode consists of a first silicide having a work function that is close to the conduction band of silicon. Each of the PMOS gate electrodes includes a second silicide region on the substrate and a second metal region on the second silicide region. The second silicide region of the PMOS gate electrode consists of a second silicide having a work function that is close to the valence band of silicon.
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