首页>
外国专利>
Polyelectrolyte nanolayers as diffusion barriers in semiconductor devices
Polyelectrolyte nanolayers as diffusion barriers in semiconductor devices
展开▼
机译:聚电解质纳米层作为半导体器件中的扩散阻挡层
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a diffusion barrier useful in an integrated circuit, which serves to prevent the migration of material from a conductive layer to the underlying substrate and further provides improved adhesion of the conductive layer to the substrate. The diffusion barrier comprises a polymer which is a polyelectrolyte, having both cationic and anionic groups along its backbone chain. Preferred polyelectolyte barriers are polyethyleneimine (PEI) and polyacrylic acid (PAA). Other polyelectrolytes may be used, such as those that contain SH—OH— aromatic groups, or those that can interact with either the metal or the adjacent layers via covalent interactions and cross-linking (e.g., POMA, PSMA). The polymeric layer may be applied in two coatings, so that the amine side chains contact the dielectric (e.g. silicon) substrate and the acidic groups are adjacent to the overlying metallic interconnect (e.g. copper). The diffusion barrier may be made thin, preferably less than 5 nm thick, which is advantageous in devices having high aspect ratios.
展开▼