DIFFUSION BARRIER FOR METALLIZATION OF SEMICONDUCTOR DEVICE AND DIFFUSION BARRIER FOR CAPACITOR OF DRAM/FRAM DEVICE, AND THE METHOD FOR MANUFACTURING THEREOF

摘要

PURPOSE: A diffusion barrier for metalization of a semiconductor device, a diffusion barrier for a capacitor of a DRAM/FRAM device, and a method for manufacturing the same are provided to prevent the formation of Cu silicide or Ta silicide in following heat treatment process over 650 deg.C by using Ta as material for the diffusion barrier, thereby excluding the steep variance in surface resistance. CONSTITUTION: The diffusion barrier has a diffusion barrier thin film structure of Ta/M/Ta(here, M is one of W, Zr, Nb and V). The steep surface resistance increase of the diffusion barrier according to a following heat treatment after the deposition of the thin film occurs over 650 deg.C. It is preferable that the total thickness of the diffusion barrier is 500 angstrom or below. In the diffusion barrier for a capacitor of a DRAM/FRAM device, the steep surface resistance increase of the diffusion barrier according to the following heat treatment after the deposition of the thin film occurs over 650 deg.C.