首页> 外国专利> Electrostatic drive type MEMS device and manufacturing method thereof, optical MEMS device, light modulation device, GLV device, and laser display

Electrostatic drive type MEMS device and manufacturing method thereof, optical MEMS device, light modulation device, GLV device, and laser display

机译:静电驱动型MEMS器件及其制造方法,光学MEMS器件,光调制器件,GLV器件和激光显示器

摘要

An electrostatic drive type MEMS device and a manufacturing method thereof are provided, in which flattening the surface of a driving side electrode, improving performance, and furthering the improvements of the degree of freedom of designing in the manufacturing process are implemented. In addition, a GLV device using this MEMS device is provided, and further a laser display using this GLV device is also provided. The electrostatic drive type MEMS device includes a substrate side electrode and a beam having a driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and driving side electrode, in which the substrate side electrode is formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.
机译:提供一种静电驱动型MEMS装置及其制造方法,其中,实现了使驱动侧电极的表面平坦化,提高了性能,并且进一步提高了制造过程中的设计自由度。另外,提供了使用该MEMS器件的GLV器件,并且还提供了使用该GLV器件的激光显示器。静电驱动型MEMS装置包括:基板侧电极;和具有驱动侧电极的梁,该驱动侧电极由作用在基板侧电极与驱动侧电极之间的静电引力或静电排斥力驱动,其中,基板侧电极由电极形成。半导体衬底中的杂质掺杂的导电半导体区域。

著录项

  • 公开/公告号US7116462B2

    专利类型

  • 公开/公告日2006-10-03

    原文格式PDF

  • 申请/专利权人 KOICHI IKEDA;

    申请/专利号US20030468873

  • 发明设计人 KOICHI IKEDA;

    申请日2002-12-16

  • 分类号G02B26/00;

  • 国家 US

  • 入库时间 2022-08-21 21:42:36

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