首页>
外国专利>
Methods of fabricating silicon carbide devices with hybrid well regions
Methods of fabricating silicon carbide devices with hybrid well regions
展开▼
机译:具有混合阱区的碳化硅器件的制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
MOS channel devices and methods of fabricating such devices having a hybrid channel are provided. Exemplary devices include vertical power MOSFETs that include a hybrid well region of silicon carbide and methods of fabricating such devices are provided. The hybrid well region may include an implanted p-type silicon carbide well portion in a p-type silicon carbide epitaxial layer, an implanted p-type silicon carbide contact portion that contacts the implanted p-type silicon carbide well portion and extends to a surface of the p-type epitaxial layer and/or an epitaxial p-type silicon carbide portion, at least a portion of the epitaxial p-type silicon carbide well portion corresponding to a p-type channel region of the MOSFET.
展开▼